A Charge Balanced Vertical Power MOSFET with Record High Balliga’s Figure of Merit: Design and Investigation

In this work, we design and simulate a high-performance vertical power MOSFET with charge balanced drift layer, which modulates the RON-BV relation from super quadratic to linear. The proposed device is designed junction layer has source channel regions isolated layer. This results in significant improvement performance of comparison other conventional devices, terms Balliga’s figure merit. A 2D TCAD simulation study reveals that an epitaxial thickness 50 μm shows ON resistance 3.84mΩ.cm2 for break down voltage 833 V, lowest among resistances reported previous literature at breakdown voltage. Further, imbalances capacitance analyses including calculation gate also been done. values merit (FOM) calculated all thicknesses structures are significantly outperforming so far.